Resistive switching behaviour in ZnO and VO2 memristors grown by pulsed laser deposition
- Autori: Macaluso, R; Mosca, M; Costanza, V; D'Angelo, A; Lullo, G; Caruso, F; Calì, C; Di Franco, F; Santamaria, M; Di Quarto, F
- Anno di pubblicazione: 2014
- Tipologia: Articolo in rivista (Articolo in rivista)
- OA Link: http://hdl.handle.net/10447/89585
The resistive switching behaviour observed in micro scale memristors based on laser ablated ZnO and VO2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm2 ZnO-based memristors have the best resistance off/on ratio.