Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
- Autori: Filatov D.O.; Koryazhkina M.N.; Novikov A.S.; Shishmakova V.A.; Shenina M.E.; Antonov I.N.; Gorshkov O.N.; Agudov N.V.; Carollo A.; Valenti D.; Spagnolo B.
- Anno di pubblicazione: 2022
- Tipologia: Articolo in rivista
- OA Link: http://hdl.handle.net/10447/543195
Abstract
The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.