Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells
- Autori: Lombardo,S;Tringali,C;Cannella,G;Battaglia,A;Foti,M;Costa,N;Principato,F;Gerardi,C
- Anno di pubblicazione: 2012
- Tipologia: Articolo in rivista (Articolo in rivista)
- Parole Chiave: surface plasmon polariton;hydrogenated amorphous silicon (a-Si:H) solar cells
- OA Link: http://hdl.handle.net/10447/64558
Abstract
We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions,improvements of ~10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface