Preliminary radiation hardness tests of single photon Si detectors
- Autori: Pagano, R; Libertino, S; Valvo, G; Condorelli, G; Carbone, B; Piana, A; Mazzillo M; Sanfilippo, DN; Fallica, PG; Principato F; Cannella G; Falci G; Lombardo S
- Anno di pubblicazione: 2010
- Tipologia: eedings
- Parole Chiave: Silicon Photomultiplier, single photon avalanche diode, dark count, gain, light ion irradiation, X-rays irradiation
- OA Link: http://hdl.handle.net/10447/49008
Abstract
Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25°C to 65°C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3