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MAURO MOSCA

Curriculum and Research

MOSCA MAURO

MAURO MOSCA

 (ING-INF/01)

Ingegneria

Contacts

+3909123860212

mauro.mosca@unipa.it

Download the curriculum in pdf file

Subjects

Academic Year Subject identification code Subject name ECTS Course of study
2023/2024 03472 FONDAMENTI DI ELETTRONICA 9 INGEGNERIA INFORMATICA
2023/2024 23291 LASER AND OPTICAL COMMUNICATIONS C.I. 6 ELECTRONICS AND TELECOMMUNICATIONS ENGINEERING (FULLY ONLINE)
2023/2024 20512 OPTOELECTRONIC DEVICES 6 ELECTRONICS ENGINEERING
2023/2024 23293 OPTOELECTRONIC DEVICES (MODULO) 3 ELECTRONICS AND TELECOMMUNICATIONS ENGINEERING (FULLY ONLINE)

Publications

Date Title Type Record
2023 Tunable IR perfect absorbers enabled by tungsten doped VO2 thin films Articolo in rivista Go to
2023 VO2 Tungsten Doped Film IR Perfect Absorber Abstract in atti di convegno pubblicato in rivista Go to
2022 Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics Contributo in atti di convegno pubblicato in volume Go to
2022 Color Conversion Light-Emitting Diodes Based on Carbon Dots: A Review Review essay (rassegna critica) Go to
2022 Density of States characterization of TiO2 films deposited by Pulsed Laser Deposition for Heterojunction solar cells Articolo in rivista Go to
2021 Custom measurement system for memristor characterisation Articolo in rivista Go to
2021 Characterization of the defect density states in MoOx for c-Si solar cell applications Articolo in rivista Go to
2021 How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs? identification of SRH centers and modeling of trap profile Contributo in atti di convegno pubblicato in volume Go to
2021 Defect incorporation in In-containing layers and quantum wells: Experimental analysis via deep level profiling and optical spectroscopy Articolo in rivista Go to
2020 Hybrid Inorganic‐Organic White Light Emitting Diodes Capitolo o Saggio Go to
2020 Analysis of Transition Metal Oxides based Heterojunction Solar Cells with S-shaped J-V curves Contributo in atti di convegno pubblicato in volume Go to
2020 Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers Articolo in rivista Go to
2020 Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer Articolo in rivista Go to
2020 Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction Articolo in rivista Go to
2020 Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire Articolo in rivista Go to
2019 Low-temperature growth of n ++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes Articolo in rivista Go to
2019 Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes Articolo in rivista Go to
2019 Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes Articolo in rivista Go to
2019 InAlN underlayer for near ultraviolet InGaN based light emitting diodes Articolo in rivista Go to
2018 Resistive switching in microscale anodic titanium dioxide-based memristors Articolo in rivista Go to
2018 Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors Contributo in atti di convegno pubblicato in volume Go to
2018 Chemical Bath Deposition as a Simple Way to Grow Isolated and Coalesced ZnO Nanorods for Light-Emitting Diodes Fabrication Contributo in atti di convegno pubblicato in volume Go to
2018 Study of Influence of the LED Technologies on Visual and Subjective/Individual Aspects Contributo in atti di convegno pubblicato in volume Go to
2018 Coalescence of ZnO nanorods grown by chemical bath deposition Abstract in atti di convegno pubblicato in volume Go to
2018 Resistive switching of anodic TiO2-based Memristors Abstract in atti di convegno pubblicato in volume Go to
2017 New process of silicon carbide purification intended for silicon passivation Articolo in rivista Go to
2017 The Effect of Nb Incorporation on the Electronic Properties of Anodic HfO2 Articolo in rivista Go to
2017 Fabrication and characterization of microscale HfO2-based Memristors Abstract in atti di convegno pubblicato in volume Go to
2017 Influence of electrodes layout on hydrothermally-grown GaN/ZnO LEDs Abstract in atti di convegno pubblicato in volume Go to
2017 An experimental study on relationship between LED lamp characteristics and non image-forming Contributo in atti di convegno pubblicato in volume Go to
2016 Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes Articolo in rivista Go to
2016 Blue-violet heterojunction LEDs based on hydrothermally synthesized ZnO nanorods Abstract in atti di convegno pubblicato in volume Go to
2015 Well-aligned hydrothermally synthesized zinc oxide nanorods on p-GaN without a seed layer Contributo in atti di convegno pubblicato in volume Go to
2015 Enhancement of photoconversion efficiency in dye-sensitized solar cells exploiting pulsed laser deposited niobium pentoxide blocking layers Articolo in rivista Go to
2015 Multiscale Approach in Studying the Influence of Annealing Conditions on Conductivity of TiO2 Nanotubes Contributo in atti di convegno pubblicato in volume Go to
2015 The p-Type Doping of ZnO: Mirage or Reality? Capitolo o Saggio Go to
2015 Fabrication and characterization of micrometer-scale ZnO memristors Poster pubblicato in volume Go to
2015 Pulsed laser deposition of ZnO and VO2 films for memristor fabrication Abstract in atti di convegno pubblicato in volume Go to
2014 Electrochemical fabrication and physicochemical characterization of metal/high- k insulating oxide/polymer/electrolyte junctions Articolo in rivista Go to
2014 Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors Articolo in rivista Go to
2014 Stability improvement of PMMA and Lumogen® coatings for hybrid white LEDs eedings Go to
2014 Resistive switching behaviour in ZnO and VO2 memristors grown by pulsed laser deposition Articolo in rivista Go to
2013 Electrochemical fabrication of amorphous TiO2/Poly-3,4 Ethylenedioxythiophene (PEDOT) hybrid structures for electronic devices. eedings Go to
2013 Warm white LED light by frequency down-conversion of mixed yellow and red Lumogen® Capitolo o Saggio Go to
2013 Electrochemical methods for carrier type identification of ZnO films grown by pulsed laser deposition on InP. eedings Go to
2013 Optical, structural, and morphological characterisation of epitaxial ZnO filas grown by pulsed-laser deposition Articolo in rivista Go to
2013 Photo-Electrochemical deposition of Poly-3,4 Ethylenedioxythiophene on Anodic Films on Ti-Si Alloys. eedings Go to
2013 Warm white LED light by frequency down- conversion of mixed perylene-based dyes eedings Go to
2013 Hybrid LEDs pave way to new lighting applications Articolo in rivista Go to
2013 Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP Articolo in rivista Go to
2013 Warm white LEDs based on Lumogen® Red and Yellow eedings Go to
2012 White LED light obtained by frequency down-conversion of perylene-based dyes eedings Go to
2012 Electrochemical Fabrication of High K Niobium-Tantalum Mixed Oxides/Poly 3-4 Ethylene Dioxythiophene Junctions. eedings Go to
2012 Generation of white LED light by frequency downconversion using a perylene-based dye Articolo in rivista Go to
2012 Photoelectrochemical Polymerization of 3-4 Ethylenedioxythiophene on High k Niobium-Tantalum Mixed Oxides. eedings Go to
2012 Fabbricazione di LED bianchi tramite down-conversion di coloranti basati su perilene eedings Go to
2012 Film di ZnO drogati di tipo p per diffusione termica di atomi di fosforo da substrati di InP eedings Go to
2011 Electrochemical fabrication of metal/oxide/conducting polymer junction Articolo in rivista Go to
2010 Electrochemical Fabrication of Inorganic/Organic Field Effect Transistor eedings Go to
2008 Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages Articolo in rivista Go to
2008 Growth of device-quality ZnO films by pulsed-laser deposition eedings Go to
2008 Lattice matched GaN/InAlN waveguides at λ = 1.55 μm grown by metalorganic vapor phase epitaxy Articolo in rivista Go to
2007 Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells Articolo in rivista Go to
2007 Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions Articolo in rivista Go to
2007 Current status of AlInN layers lattice-matched to GaN for photonics and electronics Articolo in rivista Go to
2006 Room-temperature polariton luminescence from a bulk GaN microcavity Articolo in rivista Go to
2006 Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity Articolo in rivista Go to
2006 Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions Articolo in rivista Go to
2006 Study and optimization of near UV InGaN/GaN based Light Emitting Diodes at low injection current regimes eedings Go to
2006 Solar blind AlGaN photodetectors with a very high spectral selectivity Articolo in rivista Go to
2006 First InGaN/GaN thin Film LED using SiCOI engineered substrate eedings Go to
2006 AlInN based Microcavities eedings Go to
2005 First InGaN/GaN thin Film LED using SiCOI engineered substrate eedings Go to
2005 AlInN/GaN quantum wells for intersubband transitions eedings Go to
2005 Solar Blind Detectors Based on AlGaN Grown on Sapphire eedings Go to
2005 Mid-infrared intersubband absorption in lattice-matched AlInN/GaN multiple-quantum wells Articolo in rivista Go to
2005 AlInN Based Quantum Wells for Intersubband Transitions eedings Go to
2005 Internal Photoemission in Solar Blind AlGaN Schottky Barrier Photodiodes Articolo in rivista Go to
2005 Al(In)N/GaN Heterostructures for Intersubband Transitions eedings Go to
2005 Intersubband Transitions in Nitride Based Quantum Wells Monografia Go to
2004 Multilayer (Al,Ga)N Structures for Solar-Blind Detection Articolo in rivista Go to
2004 Solar Blind Detectors Based on AlGaN Grown on Sapphire eedings Go to
2004 High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD eedings Go to
2004 High Performance Solar Blind Detectors based on AlGaN grown by MBE and MOCVD Capitolo o Saggio Go to
2004 UV Metal Semiconductor Metal Detectors. A Robust Choice for (Al,Ga)N Based Detectors eedings Go to
2004 BIOLOGICAL MONITORING AND NEPHROTOXIC SUBSTANCES Articolo in rivista Go to
2004 Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors Articolo in rivista Go to
2004 Photodétecteurs UV à base GaAlN eedings Go to
2003 Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon Articolo in rivista Go to
2001 In situ monitoring of pulsed laser indium-tin-oxide film deposition by optical emission spectroscopy Articolo in rivista Go to
2001 Stability/Instability of Conductivity and Work Function Changes of ITO Thin Films, UV-Irradiated in Air or Vacuum. Measurements by the Four-Probe Method and by Kelvin Force Microscopy Articolo in rivista Go to
2001 Effects of the process conditions on the plume of a laser-irradiated indium-tin-oxide target Articolo in rivista Go to
2001 A Simple Apparatus for the Determination of the Optical Constants and the Thickness of Absorbing Thin Films Articolo in rivista Go to
2001 Deposition of High Quality Indium Tin Oxide Films by Monitoring InO Emission Lines eedings Go to
2000 In situ monitoring of pulsed laser indium-tin-oxide film deposition by Optical Emission Spectroscopy eedings Go to
1999 Indium Tin Oxide Photoablation: Spectroscopic Analysis of the Plume eedings Go to