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Film di ZnO drogati di tipo p per diffusione termica di atomi di fosforo da substrati di InP


We report on p-type doping of ZnO films grown by pulsed-laser deposition on InP substrates. Electrical properties change of the films, from n-type to p-type, has been observed after postgrowth annealing at 600°C for 1h in air.