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Characterization of the defect density states in MoOx for c-Si solar cell applications

  • Authors: Scirè, D.; Macaluso, R.; Mosca, M.; Mirabella, S.; Gulino, A.; Isabella, O.; Zeman, M.; Crupi, I.
  • Publication year: 2021
  • Type: Articolo in rivista
  • OA Link:


Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.