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Resistive switching behaviour in ZnO and VO2 memristors grown by pulsed laser deposition

  • Authors: Macaluso, R; Mosca, M; Costanza, V; D'Angelo, A; Lullo, G; Caruso, F; Calì, C; Di Franco, F; Santamaria, M; Di Quarto, F
  • Publication year: 2014
  • Type: Articolo in rivista (Articolo in rivista)
  • OA Link:


The resistive switching behaviour observed in micro scale memristors based on laser ablated ZnO and VO2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm2 ZnO-based memristors have the best resistance off/on ratio.