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Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors

  • Authors: Aglieri, V.; Lullo, G.; Mosca, M.; MacAluso, R.; Zaffora, A.; Di Franco, F.; Santamaria, M.; Lo Cicero, U.; Razzari, L.
  • Publication year: 2018
  • Type: Contributo in atti di convegno pubblicato in volume
  • OA Link:


The paper presents the resistive switching of electroforming-free Ti/anodic-TiO2/Cu memristors. Anodic TiO2thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states.