Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors
- Autori: Aglieri, V.; Lullo, G.; Mosca, M.; MacAluso, R.; Zaffora, A.; Di Franco, F.; Santamaria, M.; Lo Cicero, U.; Razzari, L.
- Anno di pubblicazione: 2018
- Tipologia: Contributo in atti di convegno pubblicato in volume
- OA Link: http://hdl.handle.net/10447/337923
The paper presents the resistive switching of electroforming-free Ti/anodic-TiO2/Cu memristors. Anodic TiO2thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states.