Lattice matched GaN/InAlN waveguides at λ = 1.55 μm grown by metalorganic vapor phase epitaxy
- Autori: A LUPU; F JULIEN; S GOLKA; G POZZOVIVO; G STRASSER; E BAUMANN; F GIORGETTA; D HOFSTETTER; S NICOLAY; MOSCA M; E FELTIN; J - F CARLIN; N GRANDJEAN
- Anno di pubblicazione: 2008
- Tipologia: Articolo in rivista
- OA Link: http://hdl.handle.net/10447/21234
We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-μm-wide WGs the propagation losses in the 1.5- to 1.58-μm spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.