Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells
- Autori: SIMEONOV, D; FELTIN, E; BUHLMANN, H-J; ZHU, T; CASTIGLIA, A; MOSCA, M; CARLIN, J-F; BUTTE, R'; GRANDJEAN, N
- Anno di pubblicazione: 2007
- Tipologia: Articolo in rivista (Articolo in rivista)
- OA Link: http://hdl.handle.net/10447/19209
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN∕GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at ∼420nm is achieved under pulsed excitation at room temperature for a peak power density of 400kW/cm2. The lasing emission linewidth is down to 0.033nm.