Effect of high-k materials in the control dielectric stack of nanocrystal memories
- Autori: Spitale, E.; Corso, D.; Crupi, I.; Nicotra, G.; Lombardo, S.; Deleruyelle, D.; Gely, M.; Buffet, N.; De Salvo, B.; Gerardi, C.
- Anno di pubblicazione: 2004
- Tipologia: eedings
- Parole Chiave: Engineering (all)
- OA Link: http://hdl.handle.net/10447/179568
Abstract
In this paper we studied program/erase characteristics by FN tunneling in Si nanocrystal memories. Starting from a very good agreement between experimental data and simulations in the case of a memory cell with a thin tunnel oxide, Silicon dots as medium for charge storage, and a CVD silicon dioxide used as control dielectric, we present estimated values of the charge trapping when a high-k material is present in the control dielectric. We then show preliminary results of nanocrystal memories with control dielectric containing high-k materials. ©2004 IEEE.