High-efficiency silicon-compatible photodetectors based on Ge quantum dots
- Autori: Cosentino, S.; Le, P.; Lee, S.; Paine, D.; Zaslavsky, A.; Pacifici, D.; Mirabella, S.; Miritello, M.; Crupi, I.; Terrasi, A.
- Anno di pubblicazione: 2011
- Tipologia: Articolo in rivista (Articolo in rivista)
- Parole Chiave: Fully compatible; Ge quantum dot; High efficiency; Internal quantum efficiency; matrix; Metal/insulator/semiconductor; Photocurrent generations; Responsivity; Silicon Technologies; Thermal budget; Transport mechanism; Wavelength ranges, Amorphous silicon; Germanium; Optoelectronic devices; Photodetectors; Semiconductor quantum dots; Silica, Quantum efficiency
- OA Link: http://hdl.handle.net/10447/151426
Abstract
We report on high responsivity, broadband metal/insulator/semiconductor photodetectors with amorphous Ge quantum dots (a-Ge QDs) as the active absorbers embedded in a silicon dioxide matrix. Spectral responsivities between 1-4 A/W are achieved in the 500-900 nm wavelength range with internal quantum efficiencies (IQEs) as high as ∼700%. We investigate the role of a-Ge QDs in the photocurrent generation and explain the high IQE as a result of transport mechanisms via photoexcited QDs. These results suggest that a-Ge QDs are promising for high-performance integrated optoelectronic devices that are fully compatible with silicon technology in terms of fabrication and thermal budget. © 2011 American Institute of Physics.