Responsivity measurements of N-on-P and P-on-N silicon photomultipliers in the continuous wave regime
- Autori: Adamo, G.; Agro', D.; Stivala, S.; Parisi, A.; Giaconia, G.; Busacca, A.; Mazzillo, M.; Sanfilippo, D.; Fallica, G.
- Anno di pubblicazione: 2013
- Tipologia: Proceedings (TIPOLOGIA NON ATTIVA)
- OA Link: http://hdl.handle.net/10447/74139
We report the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon P-type and N-type substrate respectively. Responsivity measurements have been performed with an incident optical power from tenths of picowatts to hundreds of nanowatts and on a broad spectrum, ranging from ultraviolet to near infrared (340-820 nm). For both classes of investigated SiPMs, responsivity shows flat response versus the optical incident power, when a preset overvoltage and wavelength is applied . More in detail, this linear behavior extends up to about 10 nW for lower overvoltages, while a shrink is observed when the reverse bias voltage increases. With regards to our responsivity measurements, carried out in the abovementioned spectral range, we have found a peak around 669 nm for the N-on-P and a peak at 417 nm for the P-on-N SiPM. A physical explanation of the all experimental results is also provided in the paper.