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Nonlinear dependence on temperature and field of electron spin depolarization in GaAs semiconductors

  • Autori: Spezia, S; Persano Adorno, D; Pizzolato, N; Spagnolo, B
  • Anno di pubblicazione: 2009
  • Tipologia: Altro
  • Parole Chiave: Spin polarized transport in semiconductors; spin relaxation and scattering; Monte Carlo simulation.
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In this work the influence of temperature and drift conditions on the electron spin relaxation in lightly doped n-type GaAs bulk semiconductors is investigated. The electron transport, including the evolution of the spin polarization vector, is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium. Electron-spin states in semiconductor structures relax by scattering with imperfections, other carriers and phonons. Spin relaxation lengths and times are computed through the D'yakonov-Perel process since this is the more relevant spin relaxation mechanism in the regime of interest (10 < T < 300 K). The decay of the initial spin polarization of the conduction electrons is calculated as a function of the distance under the presence of a static electric field varying in the range 0.1 - 3 kV/cm. We find that the electron spin relaxation distance and time have a nonmonotonic dependence on both the lattice temperature and the electric field amplitude. Understanding of these phenomena could lead to high temperature and high field engineering of the electron spin memory.