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Importance of Spin-Orbit Interaction for the Electron Spin Relaxation in Organic Semiconductors

  • Autori: Nuccio, L.; Willis, M.; Schulz, L.; Fratini, S.; Messina, F.; D'Amico, M.; Pratt, F.; Lord, J.; Mckenzie, I.; Loth, M.; Purushothaman, B.; Anthony, J.; Heeney, M.; Wilson, R.; Hernández, I.; Cannas, M.; Sedlak, K.; Kreouzis, T.; Gillin, W.; Bernhard, C.; Drew, A.
  • Anno di pubblicazione: 2013
  • Tipologia: Articolo in rivista (Articolo in rivista)
  • OA Link:


Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.