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Investigation of the impact of neutron irradiation on SiC power MOSFETs lifetime by reliability tests

  • Autori: Principato F; Allegra G; Cappello C; Crepel O; Nicosia N; D’Arrigo S; Cantarella V; Di Mauro A; Abbene L; Mirabello M; Pintacuda
  • Anno di pubblicazione: 2021
  • Tipologia: Articolo in rivista
  • OA Link:


High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. The neutron test campaigns on the SiC power MOSFETs (manufactered by ST) were con-ducted on the same wafer lot devices by STMicroelectronics and Airbus, with different neutron tester systems. HTGB and HTRB tests, which characterise gate-oxide integrity and junction robustness, show no difference between the non irradiated devices and those which survived to the neutron irradiation tests, with neutron fluence up to 2 × 1011 (n/cm2). Electrical characterization performed pre and post-irradiation on different part number of power devices (Si, SiC MOSFETs and IGBTs) which survived to neutron irradiation tests does not show alteration of the data-sheet electrical parameters due to neutron interaction with the device.