Schottky barrier height tuning by Hybrid organic-inorganic multilayers

Abstract

Semiconducting and insulating polymers and copolymers/Au nanograms based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograms) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I-V) measurements in the thickness range of 1-5 bilayers (BL). At different number of layers, current-voltage (I-V) measurements were performed. Results showed a rectifying behavior. Junction parameters, such as barrier height (BH), from the I-V measurements for example for the PMMA-6-PS based Au/HyMLs/p-Si structure were obtained as 0.72±0.02 eV at 1BL and 0.64±0.02eV at 5BL. It was observed that the BH value of 0.61 eV obtained for the 5 BL PS based Au/HyMLs/p-Si structure was lower than the value of 0.68 eV of conventional Au/p-Si Schottky diodes. Thus, modification of the interfacial potential barrier for Au/p-Si diodes has been achieved using a thin MLs of different polymers based HyMls semiconductor.