Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability

Abstract

Silicon carbide (SiC) MOSFETs, as a member of the emerging technology of wide-bandgap (WBG) semiconductors, are transforming high-power and high-temperature applications due to their superior electrical and thermal properties. Their potential to outperform traditional silicon-based devices, particularly in terms of efficiency and operational stability, has made them a popular choice for power electronics. However, reliability issues about numerous failure types, including gate-oxide degradation, threshold voltage instability, and body diode degeneration, remain serious challenges. This article critically evaluates the key failure mechanisms that affect SiC MOSFET reliability and their impact on device performance. Furthermore, this paper discusses current advances in SiC technology, including both improvements and continued dependability difficulties. Key areas of future study are suggested, with an emphasis on improved material characterization, thermal management, and creative device architecture to improve SiC MOSFET performance and long-term reliability. The insights presented will help to improve the design and testing processes required for SiC MOSFETs’ widespread use in critical high-power applications. © 2025 by the authors.