SPICE Modelling of commercially availabe 1200V, 30mΩ MOSFET at different Temperatures for Static Characteristics

Abstract

When compared to silicon, silicon carbide's (SiC) electro-thermal characteristics make it a strong contender for high voltage and high frequency applications. Since SiC power MOSFETs have been more widely available commercially just recently, there is an immediate need for precise simulation models to anticipate device behavior and facilitate circuit design. The silicon carbide (SiC) power MOSFET electro-thermal behavioral model (ETM) created by SPICE is presented in this study. The phenomena typical of static and dynamic behavior that depend on self-heating and junction temperature are covered in this model, which is based on the SPICE model. By using a single equation to describe MOSFET behavior spanning three distinct zones - weak, moderate, and strong inversion zones - the modified EKV model performs better than the reduced quadratic model. The model was simulated for different temperatures in comparison to DATASHEET for different characteristics. Accurate results are observed in comparison to the datasheet.