Nonstationary distributions and relaxation times in a stochastic model of memristor
- Autori: Agudov, N.V.; Safonov, A.V.; Krichigin, A.V.; Kharcheva, A.A.; Dubkov, A.A.; Valenti, D.; Guseinov, D.V.; Belov, A.I.; Mikhaylov, A.N.; Carollo, A.; Spagnolo, B.
- Anno di pubblicazione: 2020
- Tipologia: Articolo in rivista
- OA Link: http://hdl.handle.net/10447/408142
Abstract
We propose a stochastic model for a memristive system by generalizing known approaches and experimental results. We validate our theoretical model by experiments carried out on a memristive device based on multilayer structure. In the framework of the proposed model we obtain the exact analytic expressions for stationary and nonstationary solutions. We analyze the equilibrium and non-equilibrium steady-state distributions of the internal state variable of the memristive system and study the influence of fluctuations on the resistive switching, including the relaxation time to the steady-state. The relaxation time shows a nonmonotonic dependence, with a minimum, on the intensity of the fluctuations. This paves the way for using the intensity of fluctuations as a control parameter for switching dynamics in memristive devices.