Wide and Ultrawide Bandgap Power Semiconductors: A Comprehensive System-Level Review

Abstract

This review analyzes the transition from silicon to wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductor materials for power electronics, focusing on Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies. Following a PRISMA-based systematic review methodology, we analyzed 94 peer-reviewed publications spanning device technology, converter architectures, and system applications. We employ a bottom-up approach, progressing from fundamental material properties through device architectures and converter topologies to system-level implications. We examine how intrinsic material properties enable operation at elevated temperatures, voltages, and frequencies while minimizing losses. Through analysis of Figures of Merit and system-level Key Performance Indicators, we quantify WBG benefits across automotive, industrial, renewable energy, and consumer electronics sectors, demonstrating 3–5× power density improvements and 20–40% cost reductions. The review presents emerging device technologies, including vertical GaN for medium-voltage applications and monolithic bidirectional switches (BDSs), enabling single-stage power conversion. We provide the first comprehensive topology-level comparison of emerging vertical GaN and monolithic bidirectional switches against established SiC solutions, identifying specific applications where each technology offers advantages. A comprehensive topology-by-topology comparison between SiC and GaN is provided, offering design guidelines for device selection. The review addresses practical constraints, including dynamic on-resistance degradation, threshold voltage instability, and electromagnetic interference challenges for both SiC and GaN. Finally, we examine emerging UWBG materials (B-Ga2O3, AlN, c-BN, Diamond) and their development status, manufacturing challenges, supply chain considerations, and commercialization prospects for ultra-high-voltage applications.