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SIMONPIETRO AGNELLO

Interfacial disorder of graphene grown at high temperatures on 4H-SiC(000-1)

  • Autori: Giannazzo, F.; Nicotra, G.; Deretzis, I.; Piazza, A.; Fisichella, G.; Agnello, S.; Spinella, C.; La Magna, A.; Roccaforte, F.; Yakimova, R.
  • Anno di pubblicazione: 2016
  • Tipologia: Contributo in atti di convegno pubblicato in volume
  • OA Link: http://hdl.handle.net/10447/225200

Abstract

This paper presents an investigation of the morphological and structural properties of graphene (Gr) grown on SiC(000-1) by thermal treatments at high temperatures (from 1850 to 1950 ºC) in Ar at atmospheric pressure. Atomic force microscopy and micro-Raman spectroscopy showed that the grown Gr films are laterally inhomogeneous in the number of layers, and that regions with different stacking-type (coupled or decoupled Gr films) can coexist in the same sample. Scanning transmission electron microscopy and electron energy loss spectroscopy showed that a nm-thick C-Si-O amorphous layer is present at the interface between Gr and SiC. Basing on these structural results, the mechanisms of Gr growth on the C-face of SiC under these annealing conditions and the role of this disordered layer in the suppression of epitaxy between Gr and the substrate have been discussed.