Investigation on the Single Event Burnout threshold behaviour of Power MOSFETs under atmospheric-like neutron spectrum irradiation
- Authors: Marchese, N.; Solano, A.; Cazzaniga, C.; Frost, C.D.; Tomarchio, E.; Pace, C.
- Publication year: 2017
- Type: Altro
- OA Link: http://hdl.handle.net/10447/275404
Abstract
N-channel power MOSFETs were tested at ChipIr (ISIS-RAL) with atmospheric-like neutron spectrum. Voltage thresholds for Single Event Burnout were evaluated and their correlations with the devices characteristics (V(BR)DSS) were investigated.