Quantum well intermixing with high spatial selectivity using a pulsed laser technique
- Authors: McLean C.J.; McKee A.; Lullo G.; Bryce A.C.; De La Rue R.M.; Marsh J.H.
- Publication year: 1995
- Type: Articolo in rivista
- OA Link: http://hdl.handle.net/10447/675785
Abstract
The authors demonstrate a new quantum well intermixing technique which allows bandgap shifts of typically 100meV to be realised with a high spatial resolution in a GaInAs/GaInAsP MQW waveguide structure. The material was irradiated with pulses from a Q-switched Nd:YAG laser, and was then subjected to rapid thermal annealing at 700 degrees C for several minutes. The spatial resolution of the disordering process was investigated across a masked interface, and was determined to be less than or equal to 25 mu m.