Influence of Ge doping level on the EPR signal of Ge(1), Ge(2) and E’Ge defects in Ge-doped silica
- Authors: Alessi, A; Agnello, S; Gelardi, FM; Messina, G; Carpanese, M
- Publication year: 2010
- Type: eedings
- OA Link: http://hdl.handle.net/10447/58085