Wide Temperature Operation of 40-Gb/s 1550-nm Electroabsorption Modulated Lasers
- Authors: BREM KUMAR, SARAVANAN; THOMAS, WENGER; CHRISTIAN, HANKE; PHILIPP, GERLACH; MARTIN, PESCHKE; MACALUSO, R
- Publication year: 2006
- Type: Articolo in rivista
- OA Link: http://hdl.handle.net/10447/32462
Abstract
Electroabsorption modulated lasers (EMLs) exploiting the quantum confined Stark effect need thermoelectric coolers to achieve stable output power levels and dynamic extinction ratios. Temperature-independent operation is reported between 20 C and 70 C for InGaAlAs–InP-based monolithically integrated 1550-nm EMLs exploiting a shared active area at 40 Gb/s by actively controlling the electroabsorption modulator bias voltage. Dynamic extinction ratios of at least 8 dB and fiber-coupled mean modulated optical power of at least 0.85 mW are obtained over the mentioned temperature range.