Localized charge storage in nanocrystal memories: Feasibility of a multi-bit cell
- Authors: Corso, D.; Crupi, I.; Ancarani, V.; Ammendola, G.; Molas, G.; Perniola, L.; Lombardo, S.; Gerardi, C.; De Salvo, B.
- Publication year: 2003
- Type: eedings
- OA Link: http://hdl.handle.net/10447/179608
Abstract
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cell for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.