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ISODIANA CRUPI

Nanocrystal MOS with silicon-rich oxide

  • Authors: Crupi, I.; Lombardo, S.; Gerardi, C.; Fazio, B.; Vulpio, M.; Rimini, E.; Melanotte, M.
  • Publication year: 2002
  • Type: eedings
  • OA Link: http://hdl.handle.net/10447/179620

Abstract

By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.