Hot carrier effects in n-MOSFETs with SiO2/HfO2/HfSiO gate stack and TaN metal gate
- Authors: Crupi, I.
- Publication year: 2009
- Type: Articolo in rivista (Articolo in rivista)
- OA Link: http://hdl.handle.net/10447/176707
Abstract
Charge trapping and trap generation in field-effect transistors with SiO2/HfO2/HfSiO gate stack and TaN metal gate electrode are investigated under uniform and non-uniform charge injection along the channel. Compared to constant voltage stress (CVS), hot carrier stress (HCS) exhibits more severe degradation in transconductance and subthreshold swing. By applying a detrapping bias, it is demonstrated that charge trapping induced degradation is reversible during CVS, while the damage is permanent for hot carrier injection case. © 2008 Elsevier B.V. All rights reserved.