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Electrochemically prepared oxides for resistive switching memories

  • Autori: Zaffora, A.; Di Quarto, F.; Habazaki, H.; Valov, I.; Santamaria, M.*
  • Anno di pubblicazione: 2019
  • Tipologia: Articolo in rivista (Articolo in rivista)
  • Parole Chiave: Physical and Theoretical Chemistry
  • OA Link:


Redox-based resistive switching memories (ReRAMs) are the strongest candidates for next generation nonvolatile memories. These devices are commonly composed of metal/solid electrolyte/metal junctions, where the solid electrolyte is usually an oxide layer. A key aspect in the ReRAMs development is the solid electrolyte engineering, since it is crucial to tailor the material properties for obtaining excellent switching properties (e.g. retention, endurance, etc.). Here we present an anodizing process as a non vacuum and low temperature electrochemical technique for growing oxides with tailored structural and electronic properties. The effect of the anodizing conditions on the solid state properties of the anodic oxides is studied in relation to the final ReRAM device performances demonstrating the great potentiality of this technique to produce high quality oxide thin films for resistive switching memories.