Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors
- Authors: Mosca, M; Macaluso, R; Randazzo, G; Di Bella, M; Caruso, F; Cali', C; Di Franco, F; Santamaria, M; Di Quarto, F
- Publication year: 2014
- Type: Articolo in rivista (Articolo in rivista)
- OA Link: http://hdl.handle.net/10447/89588
Organic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization of a Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristics showed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in the triode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of the devices.