Electrochemical Tantalum Oxide for Resistive Switching Memories
- Autori: Zaffora, A.; Cho, D.; Lee, K.; Di Quarto, F.; Waser, R.; Santamaria, M.; Valov, I.
- Anno di pubblicazione: 2017
- Tipologia: Articolo in rivista (Articolo in rivista)
- OA Link: http://hdl.handle.net/10447/252000
Redox‐based resistive switching memories (ReRAMs) are strongest candidates for the next‐generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta2O5‐based devices by anodizing. This method allows to grow high‐quality and dense oxide thin films onto a metallic substrates with precise control over morphology and thickness. Electrochemical‐oxide‐based devices demonstrate superior properties, i.e., endurance of at least 106 pulse cycles and/or 103I–V sweeps maintaining a good memory window with a low dispersion in ROFF and RON values, nanosecond fast switching, and data retention of at least 104 s. Multilevel programing capability is presented with both I–V sweeps and pulse measurements. Thus, it is shown that anodizing has a great prospective as a method for preparation of dense oxide films for resistive switching memories