Monte Carlo study of diffusion noise reduction in GaAs operating under periodic conditions
- Autori: Persano Adorno, D; Pizzolato, N; Spagnolo, B
- Anno di pubblicazione: 2009
- Tipologia: eedings
- Parole Chiave: Monte Carlo, Noise, Semiconductors,Transport properties theory
- OA Link: http://hdl.handle.net/10447/46790
The effects of an external correlated source of noise on the intrinsic carrier noise in a low-doped GaAs bulk, operating under periodic conditions, are investigated. Numerical residts confirm that the dynamical response of electrons driven by a high-frequency periodic electric field receives a benefit by the constructive interplay between the fluctuating field and the intrinsic noise of the system. In particidar, in this contribute we show a nonmonotonic behavior of the integrated spectral density, which value critically depends on the correlation time of the external noise source.