Electron dynamical response in InP semiconductors driven by fluctuating electric fields
- Autori: Persano Adorno, D.; Alaimo, P.; Pizzolato, N.; Spagnolo, B.; Di Paola, B
- Anno di pubblicazione: 2015
- Tipologia: Articolo in rivista (Articolo in rivista)
- OA Link: http://hdl.handle.net/10447/208508
The complexity of electron dynamics in low-doped n-type InP crystals operating under ﬂuctuating electric ﬁelds is deeply explored and discussed. In this study, we employ a multi-particle Monte Carlo approach to simulate the non-linear transport of electrons inside the semiconductor bulk. All possible scattering events of hot electrons in the medium, the main details of the band structure, as well as the heating effects, are taken into account. The results presented in this study derive from numerical simulations of the electron dynamical response to the application of a sub-Thz electric ﬁeld, ﬂuctuating for the superimposition of an external source of Gaussian correlated noise. The electronic noise features are statistically investigated by computing the correlation function of the velocity ﬂuctuations, its spectral density and the variance, i.e. the total noise power, for different values of amplitude and frequency of the driving ﬁeld. Our results show the presence of a cooperative non-linear behavior of electrons, whose dynamics is strongly affected by the ﬁeld ﬂuctuations. Moreover, the electrons self-organize among different valleys, giving rise to the reduction of the intrinsic noise. This counterintuitive effect critically depends on the relationship among the characteristic times of the external ﬂuctuations and the temporal scales of complex phenomena involved in the electron dynamical response. In particular, the correlation time of the electric ﬁeld ﬂuctuations appears to be crucial both for the noise reduction effect and the appearance of an anomalous diffusion effect.