External Noise Effects in Silicon MOS Inversion Layer
- Autori: Lodato, MA; Persano Adorno, D; Pizzolato, N; Spezia, S; Spagnolo, B
- Anno di pubblicazione: 2013
- Tipologia: Articolo in rivista (Articolo in rivista)
- OA Link: http://hdl.handle.net/10447/98879
The effect of the addition of an external source of correlated noise on the electron transport in silicon MOS inversion layer, driven by a static electric field, has been investigated. The electron dynamics is simulated by a Monte Carlo procedure which takes into account non-polar optical and acoustic phonons. In our modelling of the quasi-two-dimensional electron gas, the potential profile, perpendicular to the MOS structure, is assumed to follow the triangular potential approximation. We calculate the changes in both the autocorrelation function and the spectral density of the velocity fluctuations, at different values of noise amplitude and correlation time. The findings indicate that, the presence of a fluctuating component added to the static electric field can affect the total noise power, i.e. the variance of the electron velocity fluctuations. Moreover, this effect critically depends on both the amplitude of the driving electric field and the noise parameters.