Monte Carlo Simulation of Spin Relaxation of Conduction Electrons in Silicon
- Authors: Persano Adorno, D; Graceffa, C; Pizzolato, N; Lodato, MA
- Publication year: 2014
- Type: Articolo in rivista (Articolo in rivista)
- OA Link: http://hdl.handle.net/10447/93530
Recently, electrical injection of spin polarization in n-type and p-type silicon up to room-temperature has been experimental- ly carried out. Despite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on the spin depolarization process in silicon structures, in a wide range of values of temperature, doping concentration and amplitude of external fields, is still in a developing stage. In this contribution we use a semiclassical multiparti- cle Monte Carlo approach to simulate the electron transport and spin dynamics in lightly doped n-type Si crystals and numerically calculate the spin lifetimes of drifting electrons. Spin flipping is taken into account through the Elliot-Yafet mechanism, which is dominant in group IV materials. We discuss the influence of different intravalley and intervalley phonon interactions in the spin relaxation process during the spin transport. Our findings are in good agreement with those obtained by using different theoretical approaches. Moreover, our Monte Carlo predictions, in ranges of temperature and field amplitude yet unexplored, can guide future experimental studies towards a more effective design of room-temperature silicon based spintronic-devices.