Film di ZnO drogati di tipo p per diffusione termica di atomi di fosforo da substrati di InP
- Authors: Macaluso, R; Mosca, M; Calì, C
- Publication year: 2012
- Type: eedings
- Key words: ossido di zinco; drogaggio p;
- OA Link: http://hdl.handle.net/10447/63528
Abstract
We report on p-type doping of ZnO films grown by pulsed-laser deposition on InP substrates. Electrical properties change of the films, from n-type to p-type, has been observed after postgrowth annealing at 600°C for 1h in air.