GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 µm device applications
- Authors: S CALVEZ; J-M HOPKINS; A A SMITH; AH CLARK; MACALUSO R; HD SUN; MD DAWSON; T JOUHTI AND M PESSA; K GUNDOGDU; K C HALL AND T F BOGGESS
- Publication year: 2004
- Type: Articolo in rivista (Articolo in rivista)
- Key words: Surface emitting lasers ; Videodisks ; semiconductor disk
- OA Link: http://hdl.handle.net/10447/11722
Abstract
We report the use of GaInNAs/GaAs material system for a range of 1.3 mm vertical-cavity devices namely VCSELs,VCSOAs, VECSELs and SESAMs. Using optical pumping, we demonstrate that up to 4mW of 1290nm output power can be fibre-coupled from a VCSEL. We also show that tayloring the VCSEL structure allows to produce a monolithic long-wavelength VCSOA with up to 16 dB of gain. We also report the first demonstration of a 1.3 mm VECSEL with more than 0.5W of CW ouptut power. Finally, annealing effects on the properties of a GaInNAs SBR and modelocking of two Nd:doped solid state lasers using this element are described.