Optical, structural, and morphological characterisation of epitaxial ZnO filas grown by pulsed-laser deposition
- Autori: Mosca, M; Macaluso, R; Calì, C; Butté, R;Nicolay, S; Feltin, E; Martin, D; Grandjean, N.
- Anno di pubblicazione: 2013
- Tipologia: Articolo in rivista (Articolo in rivista)
- OA Link: http://hdl.handle.net/10447/76339
Abstract
We report on ZnO epitaxial growth by pulsed-laser deposition (PLD) on different substrates, such as quartz, sapphire, and GaN template. Approximately 1 μm-thick films were grown under different substrate temperatures and background oxygen conditions. X-ray diffraction analysis indicated preferential growth along the c-axis direction with a full-width at half maximum (FWHM) of the rocking curve as narrow as 230 arcs in the case of the GaN template. Low-temperature photoluminescence showed A-excitonic emission near 3.36 eV and a FWHM of D0XA emission as small as 2.89 meV at 9 K. Atomic force microscope measurements showed that roughness as low as 18 nm could be obtained. These results prove that PLD is a low-cost technique suitable to grow heteroepitaxial ZnO layers with excellent properties in terms of luminescence, crystallinity and morphology