Structural inhomogeneity of Ge-doped amorphous SiO2 probed by photoluminescence lifetime measurements under synchrotron radiation.
- Autori: AGNELLO S; BUSCARINO G; CANNAS M; MESSINA F; GRANDI S; MAGISTRIS A
- Anno di pubblicazione: 2006
- Tipologia: eedings
- OA Link: http://hdl.handle.net/10447/15141