Hot-electron noise suppression in n-Si via the Hall effect
- Authors: Ciccarello, F; Zammito, S; Zarcone, M
- Publication year: 2009
- Type: Articolo in rivista (Articolo in rivista)
- Key words: hot electrons, Si, noise, Hall effect
- OA Link: http://hdl.handle.net/10447/64874
Abstract
We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.