Layout influence on microwave performance of graphene field effect transistors
- Autori: Giambra, M.A.*; Benfante, A.; Zeiss, L.; Pernice, R.; Miseikis, V.; Pernice, W.H.P.; Jang, M.H.; Ahn, J.-H.; Cino, A.C.; Stivala, S.; Calandra, E.; Busacca, A.C.; Danneau, R.
- Anno di pubblicazione: 2018
- Tipologia: Articolo in rivista (Articolo in rivista)
- OA Link: http://hdl.handle.net/10447/347525
The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S-parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gatelength space which maximises the microwave performance.