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ALESSANDRO BUSACCA

Fabrication and characterization of graphene field effect transistors (GFET)

  • Autori: Giambra, M.; Marletta, S.; Calandra, E.; Stivala, S.; Cino, A.; Busacca, A.; Benz, C.; Pernice, W.; Danneau, R.
  • Anno di pubblicazione: 2015
  • Tipologia: Proceedings (TIPOLOGIA NON ATTIVA)
  • OA Link: http://hdl.handle.net/10447/223451

Abstract

Graphene is a flat monolayer of carbon atoms tightly packed into a two-dimensional (2D) honeycomb lattice. This peculiarity is responsible of extraordinary physical properties. Graphene exhibits a strong ambipolar field effect and thanks to its huge charge carrier mobility, graphene is a suitable material for high frequency Electronics. Graphene field effect transistors (GFET) for high frequency applications have recently received much attention and significant progress has been achieved in this area. GFETs have been already made by using pre-patterned metal or graphene nanoribbon (GNR) back-gates and hexagonal boron nitride as a dielectric spacer. Among the most employed techniques for the graphene transfer, i.e. mechanical exfoliation, chemical exfoliation and chemical vapor deposition (CVD) growth, the latter has the advantage to produce several devices on the same chip with a very high yield. In this work, we focus on the characterization of a novel generation of GFETs, in which a graphene sheet, grown via CVD, is used as channel material.