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ALESSANDRO BUSACCA

Fabrication and analysis of the layout impact in Graphene Field Effect Transistors (GFETs)

  • Autori: Giambra, M.; Zeiss, L.; Benfante, A.; Calandra, E.; Stivala, S.; Busacca, A.; Pernice, W.; Danneau, R.
  • Anno di pubblicazione: 2016
  • Tipologia: Proceedings (TIPOLOGIA NON ATTIVA)
  • OA Link: http://hdl.handle.net/10447/223193

Abstract

In this work we focused on the analysis of Graphene Field Effect Transistor (GFET) microwave parameters dependence on geometries. In particular, a statistical, experimental investigation of the cut-off frequency (ft) dependency on both the gate-drain/source distance (Δ) and the gate length (Lg) was carried out. 24 GFET families on the same chip were fabricated, each one made of 10 identical (same geometry) devices. The analysis of the measured data shows that ft is both Δ and Lg dependent, and that there exists an optimal region in Δ and Lg design space.