CulnSe2/Zn(S,O,OH) junction on Mo foil by electrochemical and chemical route for photovoltaic applications
- Autori: Oliveri, RL; Inguanta, R; Ferrara, G; Piazza, S; Sunseri, C; Parisi, A; Curcio, L; Adamo, G; Rocca, V; Pernice, R; Andò, A; Stivala, S; Giordano, A; Guarino, S; Cino, AC; Busacca, A
- Anno di pubblicazione: 2014
- Tipologia: eedings
- OA Link: http://hdl.handle.net/10447/104781
Abstract
Electrodeposition is a convenient technique for the development of low cost materials for photovoltaic (PV) device processing. Using a single step electrodeposition route, several groups have fabricated CIS (CuInSe) and CIGS (CuInGaSe) films [1]. One of the most important requirements for successful application of one-step electrodeposition film formation, is the ability to control composition of the deposited films and to develop polycrystalline microstructures with a low surface roughness and high sintered density. In this preliminary work, CIS films were produced by single bath electrodeposition finding the optimal conditions in order to achieve a dense film with high crystallinity and uniform, flat surfaces, which are of critical importance for photovoltaic applications. Electrodeposition was carried out in the potentiostatic mode using a conventional three-electrode configuration.