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ALESSANDRO BUSACCA

Responsivity measurements of SiC photodiodes

  • Autori: Adamo, G.; Agro', D.; Stivala, S.; Parisi, A.; Curcio, L.; Ando', A.; Tomasino, A.; Giaconia, G.; Busacca, A.; Mazzillo, M.; Sanfilippo, D.; Fallica, G.
  • Anno di pubblicazione: 2014
  • Tipologia: Proceedings (TIPOLOGIA NON ATTIVA)
  • OA Link: http://hdl.handle.net/10447/98093

Abstract

We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV photodiodes (henceforth, named SiC8, SiC10, SiC20) employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm respectively [1] and based on the pinch-off surface effect.