Responsivity measurements of SiC photodiodes
- Autori: Adamo, G; Agro', D; Stivala, S; Parisi, A; Curcio, L; Ando', A; Tomasino, A; Giaconia, GC; Busacca, A; MAZZILLO, M; SANFILIPPO, D; FALLICA, G
- Anno di pubblicazione: 2014
- Tipologia: eedings
- OA Link: http://hdl.handle.net/10447/98093
Abstract
We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV photodiodes (henceforth, named SiC8, SiC10, SiC20) employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm respectively [1] and based on the pinch-off surface effect.